ELE 501E - Noise in Elect.Devices&Systems

Course Objectives

Noise behaviour of BJTs, Heterojunction Bipolar Transistors, GaAs MESFETs, HEMTs, MOS and SiGe Transistors, The gain and noise optimization in HEMT, RF MOS and SiGe Transistor front end amplifiers, Noise behaviour of Schotky Barrier Diode, GaAs MESFET, RF MOS and SiGe Transistor Mixers, Noise in Parametric Amplifiers and Up-Converters, Noise in MESFET Distributed Amplifiers Distributed Mixers, Noise Parameters of Cascaded and Parallel Connected Networks, The phase noise in RF MOS and MESFET Oscillators, Noise Figure Measurment Techniques

Course Description

Noise behaviour of BJTs, Heterojunction Bipolar Transistors, GaAs MESFETs, HEMTs, MOS and SiGe Transistors, The gain and noise optimization in HEMT, RF MOS and SiGe Transistor front end amplifiers, Noise behaviour of Schotky Barrier Diode, GaAs MESFET, RF MOS and SiGe Transistor Mixers, Noise in Parametric Amplifiers and Up-Converters, Noise in MESFET Distributed Amplifiers Distributed Mixers, Noise Parameters of Cascaded and Parallel Connected Networks, The phase noise in RF MOS and MESFET Oscillators, Noise Figure Measurment Techniques