Course Information

Course Name	Turkish	Elektronik Devre ve Sistemlerde Gürültü
	English	Noise in Elect.Devices&Systems
Course Code	ELE 501E	Credit	Lecture (hour/week)	Recitation (hour/week)	Laboratory (hour/week)
Semester	3	-	3	-	-
Course Language		English
Course Coordinator		Mustafa Berke Yelten
Course Objectives		Noise behaviour of BJTs, Heterojunction Bipolar Transistors, GaAs MESFETs, HEMTs, MOS and SiGe Transistors, The gain and noise optimization in HEMT, RF MOS and SiGe Transistor front end amplifiers, Noise behaviour of Schotky Barrier Diode, GaAs MESFET, RF MOS and SiGe Transistor Mixers, Noise in Parametric Amplifiers and Up-Converters, Noise in MESFET Distributed Amplifiers Distributed Mixers, Noise Parameters of Cascaded and Parallel Connected Networks, The phase noise in RF MOS and MESFET Oscillators, Noise Figure Measurment Techniques
Course Description		Noise behaviour of BJTs, Heterojunction Bipolar Transistors, GaAs MESFETs, HEMTs, MOS and SiGe Transistors, The gain and noise optimization in HEMT, RF MOS and SiGe Transistor front end amplifiers, Noise behaviour of Schotky Barrier Diode, GaAs MESFET, RF MOS and SiGe Transistor Mixers, Noise in Parametric Amplifiers and Up-Converters, Noise in MESFET Distributed Amplifiers Distributed Mixers, Noise Parameters of Cascaded and Parallel Connected Networks, The phase noise in RF MOS and MESFET Oscillators, Noise Figure Measurment Techniques
Course Outcomes		1) The Noise behavior of the Active Devices used in RF Systems. 2) The gain and noise optimization in the Low-Noise Front-end RF Amplifiers where HEMT, RF MOS and SiGe Transistors are used within their structures. 3) The Noise Behaviour of the RF Mixers and the Optimization of the Noise Figure. 4) The Noise optimization in the Parametric Amplifiers and Converters. 5) Phase Noise Behaviour of theRF MOS and MESFET Oscillators, 6) Noise Figure Measurement Methods.
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